GROWTH DYNAMICS OF II-VI COMPOUND SEMICONDUCTOR QUANTUM DOTS EMBEDDED IN BOROSILICATE GLASS MATRIX

被引：3

作者：

Verma, Abhishek ^{[1
]}

Pandey, P. K. ^{[1
]}

Kumar, J. ^{[1
]}

Nagpal, S. ^{[1
]}

Bhatnagar, P. K. ^{[1
]}

Mathur, P. C. ^{[1
]}

机构：

[1] Univ Delhi, Dept Elect Sci, South Campus,Benito Juarez Rd, New Delhi 21, India

来源：

INTERNATIONAL JOURNAL OF NANOSCIENCE | 2008年 / 7卷 / 2-3期

关键词：

II-VI quantum dots; borosilicate glass matrix; growth dynamics; trap states; aging;

D O I：

10.1142/S0219581X08005250

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Wide bandgap II-VI semiconductor quantum dots embedded in glass matrix have shown great potential for opto-electronic device applications. The current problem is to achieve low size dispersion, high volume fraction, and better control over the size of the quantum dots in glass matrix. In this work, a modified growth method has been proposed to achieve a greater control over the size of quantum dots, to reduce their size dispersion and to increase their volume fraction. A theoretical model has been developed to quantitatively estimate the various parameters of the quantum dots. The effects of aging on various parameters of quantum dots in Semiconductor-Doped Glass (SDG) samples have also been discussed in the present work.

引用

页码：151 / 160

页数：10

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