OPTICAL SECOND-HARMONIC GENERATION INDUCED BY A DC ELECTRIC-FIELD AT THE SI-SIO2 INTERFACE

被引：74

作者：

AKTSIPETROV, OA

FEDYANIN, AA

GOLOVKINA, VN

MURZINA, TV

机构：

[1] Department of Physics, Moscow State University, Moscow

来源：

OPTICS LETTERS | 1994年 / 19卷 / 18期

关键词：

D O I：

10.1364/OL.19.001450

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

For what is to our knowledge the first time, electric-field-induced optical second-harmonic generation (SHG) is studied at the Si-SiO2 interface by the use of a metal-oxide-semiconductor (MOS) structure. The crystallographic anisotropy of this phenomenon is studied for MOS structures. Experimental results indicate that the MOS technique of de electric-field application to the Si-SiO2 interface can be effectively used for studying electroinduced effects on SHG.

引用

页码：1450 / 1452

页数：3

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