RELAXATION-TIME APPROXIMATION FOR ELECTRON-PHONON INTERACTION IN SEMICONDUCTORS

被引:9
|
作者
MARKOWICH, PA [1 ]
SCHMEISER, C [1 ]
机构
[1] TECH UNIV VIENNA,INST ANGEW & NUMER MATH,VIENNA,AUSTRIA
来源
MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES | 1995年 / 5卷 / 04期
关键词
D O I
10.1142/S0218202595000309
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
A Boltzmann equation for semiconductors is considered. Physical assumptions include the parabolic band approximation and a new relaxation time model for electron-phonon interaction. Thermal equilibrium distributions for this scattering mechanism are products of Maxwellian distributions with periodic functions of the energy, where the period is the energy of a phonon. The hydrodynamic limit is considered and a drift-diffusion model is derived by formal asymptotic methods.
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页码:519 / 527
页数:9
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