WAFER-SCALE LASER PANTOGRAPHY .3. FABRICATION OF NORMAL-METAL-OXIDE-SEMICONDUCTOR TRANSISTORS AND SMALL-SCALE INTEGRATED-CIRCUITS BY DIRECT-WRITE LASER-INDUCED PYROLYTIC REACTIONS

被引：55

作者：

MCWILLIAMS, BM

HERMAN, IP

MITLITSKY, F

HYDE, RA

WOOD, LL

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 10期

关键词：

D O I：

10.1063/1.94191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：946 / 948

页数：3

共 13 条

[1] LASER CHEMICAL VAPOR-DEPOSITION OF SELECTED AREA FE AND W FILMS [J].

ALLEN, SD ;

TRINGUBO, AB .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1641-1643

[2]

BAUERLE D, 1982, APPL PHYS LETT, V40, P819, DOI 10.1063/1.93272

[3]

BEAN JC, 1981, IMPURITY DOPING PROC, P189

[4] ELECTRICAL-PROPERTIES OF LASER CHEMICALLY DOPED SILICON [J].

DEUTSCH, TF ;

EHRLICH, DJ ;

RATHMAN, DD ;

SILVERSMITH, DJ ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :825-827

[5] PHOTODEPOSITION OF METAL-FILMS WITH ULTRAVIOLET-LASER LIGHT [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :23-32

[6] SUBMICROMETER-LINEWIDTH DOPING AND RELIEF DEFINITION IN SILICON BY LASER-CONTROLLED DIFFUSION [J].

EHRLICH, DJ ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :297-299

[7]

EHRLICH DJ, 1981, APPL PHYS LETT, V39, P957, DOI 10.1063/1.92624

[8] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1018-1020

[9] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J].

EVERSTEY.FC ;

PUT, BH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :106-110

[10] PREPARATION OF AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION FROM HIGHER SILANES SINH2N+2(NGREATER-THAN1) [J].

GAU, SC ;

WEINBERGER, BR ;

AKHTAR, M ;

KISS, Z ;

MACDIARMID, AG .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :436-438

← 1 2 →