WAFER-SCALE LASER PANTOGRAPHY .3. FABRICATION OF NORMAL-METAL-OXIDE-SEMICONDUCTOR TRANSISTORS AND SMALL-SCALE INTEGRATED-CIRCUITS BY DIRECT-WRITE LASER-INDUCED PYROLYTIC REACTIONS

被引:55
作者
MCWILLIAMS, BM
HERMAN, IP
MITLITSKY, F
HYDE, RA
WOOD, LL
机构
关键词
D O I
10.1063/1.94191
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:946 / 948
页数:3
相关论文
共 13 条
[1]   LASER CHEMICAL VAPOR-DEPOSITION OF SELECTED AREA FE AND W FILMS [J].
ALLEN, SD ;
TRINGUBO, AB .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1641-1643
[2]  
BAUERLE D, 1982, APPL PHYS LETT, V40, P819, DOI 10.1063/1.93272
[3]  
BEAN JC, 1981, IMPURITY DOPING PROC, P189
[4]   ELECTRICAL-PROPERTIES OF LASER CHEMICALLY DOPED SILICON [J].
DEUTSCH, TF ;
EHRLICH, DJ ;
RATHMAN, DD ;
SILVERSMITH, DJ ;
OSGOOD, RM .
APPLIED PHYSICS LETTERS, 1981, 39 (10) :825-827
[5]   PHOTODEPOSITION OF METAL-FILMS WITH ULTRAVIOLET-LASER LIGHT [J].
EHRLICH, DJ ;
OSGOOD, RM ;
DEUTSCH, TF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :23-32
[6]   SUBMICROMETER-LINEWIDTH DOPING AND RELIEF DEFINITION IN SILICON BY LASER-CONTROLLED DIFFUSION [J].
EHRLICH, DJ ;
TSAO, JY .
APPLIED PHYSICS LETTERS, 1982, 41 (03) :297-299
[7]  
EHRLICH DJ, 1981, APPL PHYS LETT, V39, P957, DOI 10.1063/1.92624
[8]   LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J].
EHRLICH, DJ ;
OSGOOD, RM ;
DEUTSCH, TF .
APPLIED PHYSICS LETTERS, 1981, 38 (12) :1018-1020
[9]   INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J].
EVERSTEY.FC ;
PUT, BH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :106-110
[10]   PREPARATION OF AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION FROM HIGHER SILANES SINH2N+2(NGREATER-THAN1) [J].
GAU, SC ;
WEINBERGER, BR ;
AKHTAR, M ;
KISS, Z ;
MACDIARMID, AG .
APPLIED PHYSICS LETTERS, 1981, 39 (05) :436-438