DISLOCATION REACTIONS IN ARSENIC-IMPLANTED AND ANNEALED SILICON

被引：31

作者：

MADER, S ^{[1
]}

MICHEL, AE ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,E FISHKILL LABS,HOPEWELL JUNCTION,NY 12533

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 33卷 / 02期

关键词：

D O I：

10.1002/pssa.2210330240

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：793 / 805

页数：13

共 12 条

[1] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J].

CASS, TR ;

REDDI, VGK .

APPLIED PHYSICS LETTERS, 1973, 23 (05) :268-270

[2] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS [J].

CHU, WK ;

MULLER, H ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :297-299

[3]

DEARNALEY G, 1973, ION IMPLANTATION, pCH3

[4]

Hirth J.P., 1982, THEORY DISLOCATIONS

[5]

LOMER WM, 1951, PHILOS MAG, V42, P1327

[6] MICROSTRUCTURE OF XENON-IMPLANTED SILICON [J].

MADER, S ;

TU, KN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :501-503

[7]

MADER S, TO BE PUBLISHED

[8] RESIDUAL DEFECTS IN SI PRODUCED BY RECOIL IMPLANTATION OF OXYGEN [J].

MOLINE, RA ;

CULLIS, AG .

APPLIED PHYSICS LETTERS, 1975, 26 (10) :551-553

[9]

RUHLE MR, 1972, RADIATION INDUCED VO, P255

[10] NATURE AND HABIT PLANES OF DEFECTS IN P+ ION-IMPLANTED SILICON [J].

SESHAN, K ;

WASHBURN, J .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (01) :345-352

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