PRODUCTION AND ANALYSIS OF BURIED NITRIDE LAYERS IN SI/SIO2 WITH ION-BEAM METHODS

被引：0
|
作者：
FROSE, D
KOLLEWE, D
机构：
[1] Institut für Strahlenphysik der Universität Stuttgart, 70569 Stuttgart
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 85卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(94)95955-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Nitrogen was implanted in [110]-oriented silicon and in thermally formed silicon dioxide layers. After implantation the systems were annealed to reduce radiation damage. These implanted systems were investigated with ion beam methods as RBS and NRA to determine the depth distribution of the nitrogen and the oxygen with regard to the implantation and annealing parameters.
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页码：936 / 939
页数：4
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