2-MU-M GATE-LENGTH ENHANCEMENT MODE INGAAS/INP - FE-JFETS WITH HIGH TRANSCONDUCTANCE

被引：2

作者：

ALBRECHT, H

BITTNAR, J

LAUTERBACH, C

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 02期

关键词：

D O I：

10.1109/EDL.1986.26296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：66 / 68

页数：3

共 8 条

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[2]

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[3] IN0.53 GA0.47 AS SUBMICROMETER FETS GROWN BY MBE [J].

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[4] DEPLETION AND ENHANCEMENT MODE IN0.53GA0.47AS/INP JUNCTION FIELD-EFFECT TRANSISTOR WITH A P+-INGAAS CONFINEMENT LAYER [J].

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WUNDER, R .

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[5] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J].

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DEWINTER, JC ;

MARTIN, RJ .

ELECTRON DEVICE LETTERS, 1980, 1 (06) :110-111

[6] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J].

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SOLID-STATE ELECTRONICS, 1970, 13 (10) :1415-&

[7] A SELF-ALIGNED IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY [J].

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IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) :285-287

[8]

WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459

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