SCHOTTKY-BARRIER HEIGHT OF SPUTTERED TIN CONTACTS ON SILICON

被引：32

作者：

FINETTI, M ^{[1
]}

SUNI, I ^{[1
]}

BARTUR, M ^{[1
]}

BANWELL, T ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 07期

关键词：

D O I：

10.1016/0038-1101(84)90131-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：617 / 623

页数：7

共 15 条

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[5]

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[9] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES [J].

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[10] MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

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