HIGH AL-CONTENT VISIBLE (ALGA)AS MULTIPLE QUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：7
作者：
KAWAI, H
MATSUDA, O
KANEKO, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 11期
关键词：
D O I：
10.1143/JJAP.22.L727
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L727 / L729
页数：3
相关论文
共 14 条
[1]   LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
BURNHAM, RD ;
SCIFRES, DR ;
STREIFER, W .
APPLIED PHYSICS LETTERS, 1982, 41 (03) :228-230
[2]  
CAMARAS MD, 1982, APPL PHYS LETT, V41, P317
[3]   SINGLE-LONGITUDINAL-MODE METALORGANIC CHEMICAL-VAPOR-DEPOSITION SELF-ALIGNED GAALAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS [J].
COLEMAN, JJ ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :262-263
[4]   700-H CONTINUOUS ROOM-TEMPERATURE OPERATION OF ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD .
APPLIED PHYSICS LETTERS, 1979, 35 (04) :311-314
[5]   MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURES [J].
FRIJLINK, PM ;
MALUENDA, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L574-L576
[6]   FAR-FIELD RADIATION-PATTERNS OF MULTIPLE QUANTUM WELL LASERS GROWN BY MO-CVD [J].
HALIDO, D ;
LINDSTROM, C ;
SCIFRES, DR .
ELECTRONICS LETTERS, 1982, 18 (18) :765-767
[7]   QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
KOLBAS, RM ;
DUPUIS, RD ;
DAPKUS, PD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186
[8]   SPECTRUM STUDIES ON A GAAS-ALGAAS MULTI-QUANTUM-WELL LASER DIODE GROWN BY MOLECULAR-BEAM EPITAXY [J].
IWAMURA, H ;
SAKU, T ;
KOBAYASHI, H ;
HORIKOSHI, Y .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2692-2695
[9]   PROTON-ISOLATED NARROW STRIPE VISIBLE LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
MORI, Y ;
SATO, H ;
IKEDA, M ;
MATSUDA, O ;
KANEKO, K ;
WATANABE, N .
APPLIED PHYSICS LETTERS, 1982, 40 (04) :293-295
[10]  
NISH N, 1980, APPL PHYS LETT, V35, P232
12