A DEFECT CONTROL TECHNIQUE FOR THE INTRINSIC GETTERING IN SILICON DEVICE PROCESSING

被引：27

作者：

KISHINO, S

AOSHIMA, T

YOSHINAKA, A

SHIMIZU, H

ONO, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 01期

关键词：

D O I：

10.1143/JJAP.23.L9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L9 / L11

页数：3

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