A DEFECT CONTROL TECHNIQUE FOR THE INTRINSIC GETTERING IN SILICON DEVICE PROCESSING

被引：27
|
作者：
KISHINO, S
AOSHIMA, T
YOSHINAKA, A
SHIMIZU, H
ONO, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 01期
关键词：
D O I：
10.1143/JJAP.23.L9
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L9 / L11
页数：3
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