ESTIMATION OF ION DRIFT PARAMETERS FROM CURRENT-VOLTAGE CHARACTERISTICS OF DIELECTRIC FILMS

被引：0
作者：
KOIKOV, SN
RYMSHA, VP
机构：
来源：
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1984年 / 27卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：87 / 94
页数：8
相关论文
共 50 条
[21]   Thermally affected parameters of the current-voltage characteristics of silicon photocell [J].
Radziemska, E ;
Klugmann, E .
ENERGY CONVERSION AND MANAGEMENT, 2002, 43 (14) :1889-1900
[22]   CURRENT-VOLTAGE CHARACTERISTICS, RELAXATION PROPERTIES, AND PHOTOSENSITIVITY OF POLYTHIOPENTACENE FILMS [J].
Gorishnyi, M. P. .
UKRAINIAN JOURNAL OF PHYSICS, 2011, 56 (11) :1203-1211
[23]   Effect of Magnetic Field on the Current-Voltage Characteristics of PbSnTe:In Films [J].
Epov, Vladimir S. ;
Klimov, Alexander E. ;
Shumsky, Vladimir N. .
EDM 2008: INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS, 2008, :84-+
[24]   STUDIES OF CURRENT-VOLTAGE CHARACTERISTICS OF ANTIMONY OXIDE-FILMS [J].
DUTTA, CR ;
BARUA, K .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (10) :2027-2034
[25]   Current-voltage characteristics of nanostructured SnO2 films [J].
Giberti, Alessio ;
Malagu, Cesare .
THIN SOLID FILMS, 2013, 548 :683-688
[26]   Nonlinear current-voltage characteristics of locally superconducting elemental films [J].
Christiansen, C ;
Hernandez, LM ;
Goldman, AM .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 230 (01) :121-125
[27]   CURRENT-VOLTAGE CHARACTERISTICS OF HELIUM FIELD-ION MICROSCOPE [J].
SOUTHON, MJ ;
BRANDON, DG .
PHILOSOPHICAL MAGAZINE, 1963, 8 (88) :579-&
[28]   TEMPERATURE HYSTERESIS OF CURRENT-VOLTAGE CHARACTERISTICS OF THIN SEMICONDUCTING FILMS [J].
KREMPASKY, J ;
CERVENAK, J ;
DIESKA, P ;
KUBEK, J .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 6 (02) :415-+
[29]   Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics [J].
Lukic, P. M. ;
Sasic, R. M. ;
Loncar, B. B. ;
Zunjic, A. G. .
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2011, 5 (5-6) :551-554
[30]   Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics [J].
Lukicá, P.M. ;
Šašicá, R.M. ;
Loncˆar, B.B. ;
Ţunjicá, A.G. .
Optoelectronics and Advanced Materials, Rapid Communications, 2011, 5 (05) :551-554
12345