SELECTIVE EPITAXIAL SILICON GROWTH IN THE 650-DEGREES-C-1100-DEGREES-C RANGE IN A REDUCED PRESSURE CHEMICAL VAPOR-DEPOSITION REACTOR USING DICHLOROSILANE

被引：61

作者：

REGOLINI, JL

BENSAHEL, D

SCHEID, E

MERCIER, J

机构：

[1] CNRS,PHYS COMPOSANTS SEMICOND LAB,F-38031 GRENOBLE,FRANCE

[2] CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.100910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：658 / 659

页数：2

共 13 条

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[2]

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[9]

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[10] UNIFORMLY THICK SELECTIVE EPITAXIAL SILICON [J].

PAGLIARO, R ;

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