PERFORMANCE OF GAAS MESFET OSCILLATORS IN FREQUENCY-RANGE 8-25 GHZ

被引:10
作者
TSERNG, HQ [1 ]
MACKSEY, HM [1 ]
SOKOLOV, V [1 ]
机构
[1] TEXAS INSTR INC,DALLAS,TX 75222
关键词
D O I
10.1049/el:19770057
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:85 / 86
页数:2
相关论文
共 6 条
  • [1] ABE H, 1976, IEEE INT SOLID STATE, P164
  • [2] MACKSEY HM, TO BE PUBLISHED
  • [3] MAEDA M, IEEE T MTT, V23, P661
  • [4] COMMON-GATE GAAS FET OSCILLATOR
    OMORI, M
    NISHIMOTO, C
    [J]. ELECTRONICS LETTERS, 1975, 11 (16) : 369 - 371
  • [5] EXPERIMENTS ON INTEGRATED GALLIUM-ARSENIDE FET OSCILLATORS AT X BAND
    PUCEL, RA
    BERA, R
    MASSE, D
    [J]. ELECTRONICS LETTERS, 1975, 11 (10) : 219 - 220
  • [6] ALUMINA MICROSTRIP GAAS FET 11 GHZ OSCILLATOR
    SLAYMAKER, NA
    TURNER, JA
    [J]. ELECTRONICS LETTERS, 1975, 11 (14) : 300 - 301