SHORT CHANNEL, LOW-NOISE UHF MOS-FETS UTILIZING MOLYBDENUM-GATE MASKED ION-IMPLANTATION

被引：0
|
作者：
OKABE, T [1 ]
OCHI, S [1 ]
KURONO, H [1 ]
KAGAMI, JI [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷
关键词：
D O I：
10.7567/JJAPS.15S1.201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：201 / 206
页数：6
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