LARGE AREA DOPING TECHNIQUE USING AN ION-SOURCE OF RF DISCHARGE WITH MAGNETIC-FIELD

被引：12

作者：

YOSHIDA, A ^{[1
]}

KITAGAWA, M ^{[1
]}

SETSUNE, K ^{[1
]}

HIRAO, T ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD, CENT RES LABS, OSAKA 570, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 07期

关键词：

D O I：

10.1143/JJAP.27.L1355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1355 / L1357

页数：3

共 10 条

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[9] PHOSPHORUS DOPING FOR HYDROGENATED AMORPHOUS-SILICON FILMS BY A LOW-ENERGY ION DOPING TECHNIQUE
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (04) : 253 - 255
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