A cation vacancy center in crystalline Al2O3

被引：15

作者：

Evans, BD ^{[1
]}

Cain, LS ^{[1
]}

机构：

[1] DAVIDSON COLL,DEPT PHYS,DAVIDSON,NC 28036

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1995年 / 134卷 / 1-4期

关键词：

defects; Ti+4; holes; alumina; ion-implantation; photobleaching;

D O I：

10.1080/10420159508227241

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Two experiments delineate the nature of the broad, weak, 3-eV absorption band in Al2O3: (1) anion self-implants clearly establish its association with aluminum vacancies, and (2) optical properties of this V-type center are exemplified after hole transfer from Ti+4 impurities. These properties confirm a previous theoretical description.

引用

页码：329 / 332

页数：4