GROWTH OF NITROGEN-DOPED ZNSE AND INHIBITION OF HYDROGEN PASSIVATION OF NITROGEN ACCEPTOR BY PHOTOASSISTED METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：19

作者：

FUJITA, Y

TERADA, T

SUZUKI, T

机构：

[1] Electronics Research Laboratories, Nippon Steel Corporation, Sagamihara, 229

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 8B期

关键词：

ZNSE; P-TYPE; NITROGEN DOPING; HYDROGEN PASSIVATION; TERTIARY BUTYLAMINE; PHOTOASSISTED MOCVD; SECONDARY ION MASS SPECTROMETRY; PHOTOLUMINESCENCE;

D O I：

10.1143/JJAP.34.L1034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of nitrogen doped ZnSe was carried out at the growth temperature of 330 to 390 degrees C by photoassisted metal-organic chemical vapor deposition (MOCVD). Nitrogen concentration of more than 10(18) cm(-3) was obtained at growth temperatures lower than 350 degrees C using ammonia and t-butylamine as nitrogen dopant sources. Furthermore, hydrogen passivation of nitrogen, which is regarded as a possible cause of acceptor compensation in the layer doped using ammonia, was drastically decreased and p-type layer with hole concentration of 8.3 x 10(17) cm(-3) was obtained using t-butylamine.

引用

页码：L1034 / L1036

页数：3

共 8 条

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