THE EFFECT OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引:42
作者
KUNZEL, H
KNECHT, J
JUNG, H
WUNSTEL, K
PLOOG, K
机构
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 28卷 / 03期
关键词
D O I
10.1007/BF00617982
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:167 / 173
页数:7
相关论文
共 18 条
[1]   ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703
[2]   SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS [J].
CHO, AY ;
HAYASHI, I .
SOLID-STATE ELECTRONICS, 1971, 14 (02) :125-&
[3]   P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J].
CHO, AY ;
HAYASHI, I .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4422-&
[4]   INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].
FOXON, CT ;
JOYCE, BA .
SURFACE SCIENCE, 1977, 64 (01) :293-304
[5]   EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J].
FOXON, CT ;
HARVEY, JA ;
JOYCE, BA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) :1693-&
[6]   INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J].
FOXON, CT ;
JOYCE, BA .
SURFACE SCIENCE, 1975, 50 (02) :434-450
[7]   LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS [J].
HEIM, U ;
HIESINGE.P .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (02) :461-470
[8]  
KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927
[9]   QUANTITATIVE-EVALUATION OF SUBSTRATE-TEMPERATURE DEPENDENCE OF GE INCORPORATION IN GAAS DURING MOLECULAR-BEAM EPITAXY [J].
KUNZEL, H ;
FISCHER, A ;
PLOOG, K .
APPLIED PHYSICS, 1980, 22 (01) :23-30
[10]   STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
LANG, DV ;
CHO, AY ;
GOSSARD, AC ;
ILEGEMS, M ;
WIEGMANN, W .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2558-2564