EFFECT OF WATER-VAPOR ON THE GROWTH OF ALUMINUM-OXIDE FILMS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION

被引：38

作者：

KIM, JS

MARZOUK, HA

REUCROFT, PJ

ROBERTSON, JD

HAMRIN, CE

机构：

[1] UNIV KENTUCKY,DEPT CHEM,LEXINGTON,KY 40506

[2] UNIV KENTUCKY,DEPT CHEM ENGN,LEXINGTON,KY 40506

来源：

THIN SOLID FILMS | 1993年 / 230卷 / 02期

关键词：

D O I：

10.1016/0040-6090(93)90509-N

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low pressure chemical vapor deposition of aluminum oxide films from aluminum acetylacetonate an water vapor has been investigated. Water vapor played an important role in the film growth kinetics, film purity, and the surface morphology of the grown films. High water vapor pressures produced ligand-free pure Al2O3 films with a smooth surface even at a substrate temperature of 230-degrees-C.

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收藏

页码：156 / 159

页数：4

相关论文

共 14 条

[1] COMPOSITIONAL STUDIES OF VARIOUS METAL-OXIDE COATINGS ON GLASS [J].

AJAYI, OB ;

AKANNI, MS ;

LAMBI, JN ;

JEYNES, C ;

WATTS, JF .

THIN SOLID FILMS, 1990, 185 (01) :123-136

[2] COMPARATIVE HEAT STABILITIES OF SOME METAL ACETYLACETONATE CHELATES [J].

CHARLES, RG ;

PAWLIKOWSKI, MA .

JOURNAL OF PHYSICAL CHEMISTRY, 1958, 62 (04) :440-444

[3] MECHANISMS OF COPPER CHEMICAL VAPOR-DEPOSITION [J].

COHEN, SL ;

LIEHR, M ;

KASI, S .

APPLIED PHYSICS LETTERS, 1992, 60 (01) :50-52

[4] THERMOANALYSIS OF CA AND AL ACETYLACETONATES - CATALYTIC STUDY OF THEIR BINARY-SYSTEMS WITH BA(CLO4)2.3H2O [J].

HAMID, I ;

JASIM, F .

THERMOCHIMICA ACTA, 1986, 101 :185-194

[5]

Hoene J. V., 1958, J PHYS CHEM-US, V62, P1098

[6] SELECTIVE ION-BEAM ETCHING OF AL2O3 FILMS [J].

KAWABE, T ;

FUYAMA, M ;

NARISHIGE, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (09) :2744-2748

[7] CHARACTERIZATION OF HIGH-QUALITY C-AXIS ORIENTED ZNO THIN-FILMS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION USING ZINC ACETATE AS SOURCE MATERIAL [J].

KIM, JS ;

MARZOUK, HA ;

REUCROFT, PJ ;

HAMRIN, CE .

THIN SOLID FILMS, 1992, 217 (1-2) :133-137

[8] EFFECT OF PYROLYTIC AL2O3 DEPOSITION TEMPERATURE ON INVERSION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].

KOBAYASHI, T ;

OKAMURA, M ;

YAMAGUCHI, E ;

SHINODA, Y ;

HIROTA, Y .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6434-6436

[9]

LEHOHIER B, 1992, APPL PHYS LETT, V60, P3114

[10] PREPARATION OF ALUMINA COATINGS BY CHEMICAL VAPOR-DEPOSITION [J].

LUX, B ;

COLOMBIER, C ;

ALTENA, H ;

STJERNBERG, K .

THIN SOLID FILMS, 1986, 138 (01) :49-64