SINGLE SOURCE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF LOW MICROWAVE SURFACE-RESISTANCE YBA2CU3O7

被引：93

作者：

HISKES, R

DICAROLIS, SA

YOUNG, JL

LADERMAN, SS

JACOWITZ, RD

TABER, RC

机构：

[1] Hewlett Packard, Palo Alto

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 05期

关键词：

D O I：

10.1063/1.105400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

YBa2CU3O7 films 2000-7500 angstrom thick were deposited onto [100] LaAlO3 substrates using a novel single source metalorganic chemical vapor deposition technique. We have so far observed critical currents as high as 4 X 10(6) A/cm2 at 77 K, transition temperatures (T(c) at R = 0) as high as 91 K, and the 10 GHz microwave surface resistance R(s) as low as 40-mu-OMEGA at 4.2 K and 400-mu-OMEGA at 77 K.

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页码：606 / 607

页数：2

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