PRECIPITATION IN FE-DOPED SEMI-INSULATING INP EPITAXIAL LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)

被引：0
|
作者：
CHU, SNG [1 ]
NAKAHARA, S [1 ]
LONG, JA [1 ]
RIGGS, VG [1 ]
JOHNSTON, WD [1 ]
机构：
[1] AT&T BELL LABS, MURRAY HILL, NJ USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C403 / C403
页数：1
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