HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT

被引：1
作者：
HU, CM
TAM, SC
HSU, FC
KO, PK
CHAN, TY
TERRILL, KW
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 01期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：295 / 305
页数：11
相关论文
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