IONIZATION AND DISPLACEMENT DAMAGE IN SILICON TRANSISTORS

被引：25
作者：
BRUCKER, GJ
DENNEHY, WJ
HOLMESSI.AG
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1966年 / NS13卷 / 06期
关键词：
D O I：
10.1109/TNS.1996.4324361
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：188 / +
页数：1
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