ELECTROPHYSICAL AND STRUCTURAL PROPERTIES OF n-ZnS/p-CdTe HETEROJUNCTIONS

被引：0
|
作者：
Kurbatov, D. I. [1 ]
Opanasyuk, N. M. [1 ]
Opanasyuk, A. S. [1 ]
Kosyak, V. V. [1 ]
机构：
[1] Sumy State Univ, 2 Rimsky Korsakov Str, UA-40007 Sumy, Ukraine
来源：
JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2009年 / 1卷 / 03期
关键词：
II-VI FILMS; HETEROJUNCTION; SOLID SOLUTIONS; CRYSTAL STRUCTURE; SCANNING ELECTRON MICROSCOPY; IDEALITY FACTOR; POTENTIAL BARRIER; CHARGE-TRANSPORT MECHANISM;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Electrophysical and structural properties of ZnS/CdTe film heterojunctions obtained by the sublimation method in quasi-closed volume at different growth conditions have been studied in this work. As a result, the ideality factors, saturation currents, potential barriers and the charge-transport mechanisms of these heterostructures are found. Structural investigations allowed to determine the texture type of the films, their phase composition, the lattice parameters, and the dependence of these parameters on the growth conditions as well. Shown, that on the interface of heterosystems obtained at the substrate temperatures T-s > 773 K the solid solutions with certain chemical composition are formed.
引用
收藏
页码：25 / 36
页数：12
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