2-DIMENSIONAL CARRIER FLOW IN A TRANSISTOR STRUCTURE UNDER NONISOTHERMAL CONDITIONS

被引：79
作者：
GAUR, SP
NAVON, DH
机构：
[1] IBM CORP, SYST PROD DIV, POUGHKEEPSIE, NY 12602 USA
[2] UNIV MASSACHUSETTS, ELECT & COMP ENGN DEPT, AMHERST, MA 01002 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 01期
关键词：
D O I：
10.1109/T-ED.1976.18346
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：50 / 57
页数：8
相关论文
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