EFFECT OF CARRIER LIFETIMES ON FORWARD CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS

被引：0
作者：
ZENG, J
MAWBY, PA
TOWERS, MS
BOARD, K
机构：
[1] Univ of Wales, Swansea
来源：
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1995年 / 142卷 / 03期
关键词：
CHARACTERISTIC LIFETIME; MOS THYRISTOR CONTROL; POWER ELECTRONICS;
D O I：
10.1049/ip-cds:19951952
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of different carrier lifetimes on the forward I-V characteristics of a MOS-controlled thyristor (MCT) has been studied using numerical simulation. Those physical mechanisms that have a strong effect on the forward operation of the MCT have been identified and taken into account. The results show that in the design tradeoff between the switching speed and forward current capability there exists a characteristic lifetime below which the operation mode changes from thyristor-like to IGBT-like, and in the transfer between them a region of differential negative resistance region exists.
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页码：205 / 207
页数：3
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