EFFECT OF INELASTIC PROCESSES ON THE SELF-CONSISTENT POTENTIAL IN THE RESONANT-TUNNELING DIODE

被引：32

作者：

FRENSLEY, WR

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90220-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1235 / 1239

页数：5

共 9 条

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[2] WIGNER-FUNCTION MODEL OF A RESONANT-TUNNELING SEMICONDUCTOR-DEVICE [J].

FRENSLEY, WR .

PHYSICAL REVIEW B, 1987, 36 (03) :1570-1580

[3] QUANTUM TRANSPORT MODELING OF RESONANT-TUNNELING DEVICES [J].

FRENSLEY, WR .

SOLID-STATE ELECTRONICS, 1988, 31 (3-4) :739-742

[4]

FRENSLEY WR, 1989, UNPUB BOUNDARY CONDI

[5] SELF-CONSISTENT STUDY OF THE RESONANT-TUNNELING DIODE [J].

KLUKSDAHL, NC ;

KRIMAN, AM ;

FERRY, DK ;

RINGHOFER, C .

PHYSICAL REVIEW B, 1989, 39 (11) :7720-7735

[6]

MAINS RK, 1988, UNPUB NUMERICAL CONS

[7]

POTZ W, 1989, SUPERLATTICE MICROST, V6, P189

[8] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

GOODHUE, WD ;

TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

[9]

WINGREEN S, 1987, B AM PHYS SOC, V32, P833

← 1 →