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CATHODOLUMINESCENCE STUDY OF A SILICON DIOXIDE LAYER ON SILICON WITH AID OF AUGER-ELECTRON SPECTROSCOPY
被引:18
|
作者
:
KOYAMA, H
论文数:
0
引用数:
0
h-index:
0
机构:
COMP DEV LABS LTD, ITAMI, HYOGO 664, JAPAN
KOYAMA, H
MATSUBARA, K
论文数:
0
引用数:
0
h-index:
0
机构:
COMP DEV LABS LTD, ITAMI, HYOGO 664, JAPAN
MATSUBARA, K
MOURI, M
论文数:
0
引用数:
0
h-index:
0
机构:
COMP DEV LABS LTD, ITAMI, HYOGO 664, JAPAN
MOURI, M
机构
:
[1]
COMP DEV LABS LTD, ITAMI, HYOGO 664, JAPAN
[2]
KYOTO UNIV, FAC ENGN, SAKYO KU, KYOTO 606, JAPAN
来源
:
JOURNAL OF APPLIED PHYSICS
|
1977年
/ 48卷
/ 12期
关键词
:
D O I
:
10.1063/1.323546
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:5380 / 5381
页数:2
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