MAGNETOCAPACITANCE AND THE EDGE STATE OF A 2-DIMENSIONAL ELECTRON-SYSTEM IN THE QUANTUM HALL REGIME

被引:85
作者
TAKAOKA, S
OTO, K
KURIMOTO, H
MURASE, K
GAMO, K
NISHI, S
机构
[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN
[2] OSAKA UNIV,FAC SCI,DEPT ELECT ENGN,TOYONAKA,OSAKA 560,JAPAN
[3] OKI ELECT IND CO LTD,SEMICOND TECHNOL LAB,HACHIOJI 193,JAPAN
关键词
D O I
10.1103/PhysRevLett.72.3080
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The magnetic field dependence of the capacitance of a GaAs/AlGaAs heterostructure through a two-dimensional electron system (2DES) is measured in the quantum Hall regime. The capacitance minima at the Hall plateaus are determined not by the 2DES area under the gate but by the edge length of the 2DES, which cannot be explained by an existing interpretation of the magnetocapacitance, where the capacitance is directly related to the 2DES density of states. We suggest an alternative model: the bottom values are essentially determined by the edge current carrying area. The widths of the current channels are estimated and compared with recent theoretical and experimental estimates.
引用
收藏
页码:3080 / 3083
页数:4
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