COLLECTOR-TOP GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR HIGH-SPEED DIGITAL ICS

被引:25
作者
MORIZUKA, K
NOZU, T
TSUDA, K
AZUMA, M
机构
关键词
D O I
10.1049/el:19860216
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
7
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收藏
页码:315 / 316
页数:2
相关论文
共 7 条
  • [1] Asbeck P. M., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P133
  • [2] FORMATION OF P+-LAYER IN GAAS BY DUAL IMPLANTATION OF ZN AND AS
    KASAHARA, J
    TAIRA, K
    KATO, Y
    ARAI, M
    WATANABE, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L373 - L375
  • [3] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
    KROEMER, H
    [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25
  • [4] Nakamura T., 1982, International Electron Devices Meeting. Technical Digest, P684
  • [5] NAKAMURA T, 1984, ISSCC, P152
  • [6] YOSHIDA J, 1985, 17TH P C SOL STAT DE, P22
  • [7] Yuan H. T., 1982, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1982, P100