ELECTRONIC-PROPERTIES OF NATIVE DEEP-LEVEL DEFECTS IN LIQUID-PHASE EPITAXIAL GAAS

被引：70

作者：

WANG, ZG

LEDEBO, LA

GRIMMEISS, HG

机构：

[1] UNIV LUND,DEPT SOLID STATE PHYS,S-22007 LUND 7,SWEDEN

[2] INNOVANCE AB,S-22350 LUND,SWEDEN

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 02期

关键词：

D O I：

10.1088/0022-3719/17/2/014

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：259 / 272

页数：14

共 50 条

[1] Revised model of the native deep-level defects in liquid-phase epitaxial GaAs
Nouailhat, A
Bremond, G
Guillot, G
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (04) : 275 - 279
[2] DOPANT-DEPENDENT FORMATION AND ANNEALING OF THE DOMINANT NATIVE DEEP-LEVEL DEFECT IN LIQUID-PHASE EPITAXIAL ALGAAS
KRISPIN, P
JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) : 3470 - 3476
[3] Effect of Neutron Irradiation on the Spectrum of Deep-Level Defects in GaAs Grown by Liquid-Phase Epitaxy in a Hydrogen and Argon Atmosphere
M. M. Sobolev
F. Yu. Soldatenkov
Semiconductors, 2022, 56 : 107 - 114
[4] Effect of Neutron Irradiation on the Spectrum of Deep-Level Defects in GaAs Grown by Liquid-Phase Epitaxy in a Hydrogen and Argon Atmosphere
Sobolev, M. M.
Soldatenkov, F. Yu
SEMICONDUCTORS, 2022, 56 (02) : 107 - 114
[5] DEEP-LEVEL DEFECTS IN EPITAXIAL III/V MATERIALS
NAUKA, KW
IMPERFECTIONS IN III/V MATERIALS, 1993, 38 : 343 - 396
[6] PROPERTIES OF LIQUID-PHASE EPITAXIAL GE-DOPED GAAS
NEUMANN, H
JACOBS, K
VANNAM, N
KOJ, W
KRAUSE, C
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (02): : 675 - 678
[7] EFFECTS OF DISLOCATION DENSITY ON PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS
ETTENBERG, M
JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 901 - 906
[8] DEEP-LEVEL DEFECTS IN EPITAXIAL SILICON FOR VLSI TECHNOLOGY
KAMINSKI, P
KOZLOWSKI, R
NOSSARZEWSKAORLOWSKA, E
SARNECKI, J
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES, 1994, (135): : 217 - 220
[9] A STUDY OF DEEP-LEVEL DEFECTS IN METALORGANIC VAPOR-PHASE-EPITAXY-GROWN ZNSE ON GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
WANG, YH
LI, SS
JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2535 - 2537
[10] LIQUID-PHASE EPITAXIAL DEPOSITION OF GAP ON GAAS
GOTTSCHALCH, V
BUTTER, E
JACOBS, K
KRAMER, P
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (02) : 157 - 162

← 1 2 3 4 5 →