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MEASUREMENT OF BANDGAP NARROWING EFFECTS IN P-GAAS AND IMPLICATIONS FOR ALGAAS/GAAS HBT PERFORMANCE
被引:0
作者
:
KLAUSMEIERBROWN, ME
论文数:
0
引用数:
0
h-index:
0
机构:
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
KLAUSMEIERBROWN, ME
DEMOULIN, PD
论文数:
0
引用数:
0
h-index:
0
机构:
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
DEMOULIN, PD
LUNDSTROM, MS
论文数:
0
引用数:
0
h-index:
0
机构:
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
LUNDSTROM, MS
MELLOCH, MR
论文数:
0
引用数:
0
h-index:
0
机构:
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
MELLOCH, MR
TOBIN, SP
论文数:
0
引用数:
0
h-index:
0
机构:
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
TOBIN, SP
机构
:
[1]
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
[2]
SPIRE CORP,BEDFORD,MA 01730
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1988年
/ 35卷
/ 12期
关键词
:
D O I
:
10.1109/16.8870
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:2445 / 2445
页数:1
相关论文
共 6 条
[1]
ELECTRON-MOBILITY IN P-GAAS BY TIME OF FLIGHT
AHRENKIEL, RK
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h-index:
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机构:
VARIAN RES CTR,PALO ALTO,CA 94303
VARIAN RES CTR,PALO ALTO,CA 94303
AHRENKIEL, RK
DUNLAVY, DJ
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VARIAN RES CTR,PALO ALTO,CA 94303
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DUNLAVY, DJ
GREENBERG, D
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0
引用数:
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h-index:
0
机构:
VARIAN RES CTR,PALO ALTO,CA 94303
VARIAN RES CTR,PALO ALTO,CA 94303
GREENBERG, D
SCHLUPMANN, J
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引用数:
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VARIAN RES CTR,PALO ALTO,CA 94303
VARIAN RES CTR,PALO ALTO,CA 94303
SCHLUPMANN, J
HAMAKER, HC
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN RES CTR,PALO ALTO,CA 94303
VARIAN RES CTR,PALO ALTO,CA 94303
HAMAKER, HC
MACMILLAN, HF
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN RES CTR,PALO ALTO,CA 94303
VARIAN RES CTR,PALO ALTO,CA 94303
MACMILLAN, HF
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(10)
: 776
-
778
[2]
SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
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0
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BLAKEMORE, JS
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
: R123
-
R181
[3]
CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
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0
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STERN, F
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0
引用数:
0
h-index:
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机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STERN, F
[J].
JOURNAL OF APPLIED PHYSICS,
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47
(02)
: 631
-
643
[4]
MODELING OF MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED SILICON EMITTERS
DELALAMO, JA
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h-index:
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机构:
STANFORD UNIV, STANFORD, CA 94305 USA
STANFORD UNIV, STANFORD, CA 94305 USA
DELALAMO, JA
SWANSON, RM
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h-index:
0
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STANFORD UNIV, STANFORD, CA 94305 USA
STANFORD UNIV, STANFORD, CA 94305 USA
SWANSON, RM
[J].
SOLID-STATE ELECTRONICS,
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(11)
: 1127
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[5]
KLAUSMEIERBROWN ME, 1988, IN PRESS IEEE T ELEC
[6]
MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS
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PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
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DEGRAAFF, HC
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(10)
: 857
-
862
←
1
→
共 6 条
[1]
ELECTRON-MOBILITY IN P-GAAS BY TIME OF FLIGHT
AHRENKIEL, RK
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN RES CTR,PALO ALTO,CA 94303
VARIAN RES CTR,PALO ALTO,CA 94303
AHRENKIEL, RK
DUNLAVY, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN RES CTR,PALO ALTO,CA 94303
VARIAN RES CTR,PALO ALTO,CA 94303
DUNLAVY, DJ
GREENBERG, D
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN RES CTR,PALO ALTO,CA 94303
VARIAN RES CTR,PALO ALTO,CA 94303
GREENBERG, D
SCHLUPMANN, J
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN RES CTR,PALO ALTO,CA 94303
VARIAN RES CTR,PALO ALTO,CA 94303
SCHLUPMANN, J
HAMAKER, HC
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN RES CTR,PALO ALTO,CA 94303
VARIAN RES CTR,PALO ALTO,CA 94303
HAMAKER, HC
MACMILLAN, HF
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN RES CTR,PALO ALTO,CA 94303
VARIAN RES CTR,PALO ALTO,CA 94303
MACMILLAN, HF
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(10)
: 776
-
778
[2]
SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
论文数:
0
引用数:
0
h-index:
0
BLAKEMORE, JS
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
: R123
-
R181
[3]
CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
CASEY, HC
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STERN, F
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(02)
: 631
-
643
[4]
MODELING OF MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED SILICON EMITTERS
DELALAMO, JA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, STANFORD, CA 94305 USA
STANFORD UNIV, STANFORD, CA 94305 USA
DELALAMO, JA
SWANSON, RM
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV, STANFORD, CA 94305 USA
STANFORD UNIV, STANFORD, CA 94305 USA
SWANSON, RM
[J].
SOLID-STATE ELECTRONICS,
1987,
30
(11)
: 1127
-
1136
[5]
KLAUSMEIERBROWN ME, 1988, IN PRESS IEEE T ELEC
[6]
MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS
SLOTBOOM, JW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
SLOTBOOM, JW
DEGRAAFF, HC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
DEGRAAFF, HC
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(10)
: 857
-
862
←
1
→