PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN BY MIGRATION-ENHANCED EPITAXY AT 300-DEGREES-C SUBSTRATE-TEMPERATURE

被引：40

作者：

HORIKOSHI, Y

KAWASHIMA, M

YAMAGUCHI, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 23期

关键词：

D O I：

10.1063/1.97768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1686 / 1687

页数：2

共 7 条

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[4] SIMULTANEOUS OBSERVATION OF RHEED OSCILLATION DURING GAAS MBE GROWTH WITH MODULATED ELECTRON-BEAM [J].

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[5]

TANAKA M, 1985, 2ND P INT C MOD SEM, P310

[6]

TU CW, 1986, 4TH P INT C MOL BEAM, P159

[7] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :741-746

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