CONCENTRATION PROFILING FOR HIGH-VOLTAGE P+-N-N+ DIODES

被引：4

|

作者：

SUNDERSINGH, VP

GHATOL, AA

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1983年 / 54卷 / 01期

关键词：

D O I：

10.1080/00207218308938701

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：127 / 137

页数：11

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