CARRIER TRANSPORT ACROSS ELECTROLUMINESCENT P-N JUNCTIONS IN GAAS

被引：13

作者：

PANKOVE, JI

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1964年 / 35卷 / 06期

关键词：

D O I：

10.1063/1.1713763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1890 / &

共 13 条

[1] ELECTRON-HOLE AND ELECTRON-IMPURITY BAND TUNNELING IN GAAS LUMINESCENT JUNCTIONS [J].

ARCHER, RJ ;

LEITE, RC ;

YARIV, A ;

PORTO, SPS ;

WHELAN, JM .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :483-&

[2] EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GAAS [J].

BRAUNSTEIN, R ;

PANKOVE, JI ;

NELSON, H .

APPLIED PHYSICS LETTERS, 1963, 3 (02) :31-33

[3] EFFECT OF DOPING ON FREQUENCY OF STIMULATED AND INCOHERENT EMISSION IN GAAS DIODES [J].

DOUSMANIS, GC ;

MUELLER, CW ;

NELSON, H .

APPLIED PHYSICS LETTERS, 1963, 3 (08) :133-135

[4] EVIDENCE OF REFRIGERATING ACTION BY MEANS OF PHOTON EMISSION IN SEMICONDUCTOR DIODES [J].

DOUSMANIS, GC ;

PETZINGER, KG ;

NELSON, H ;

MUELLER, CW .

PHYSICAL REVIEW, 1964, 133 (1A) :A316-A318

[5]

HILDIBRAND J, UNPUBLISHED

[6] RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION [J].

NATHAN, MI ;

BURNS, G .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :89-90

[7] RECOMBINATION RADIATION IN GAAS [J].

NATHAN, MI ;

BURNS, G .

PHYSICAL REVIEW, 1963, 129 (01) :125-&

[8]

NATHAN MI, 1964, B AM PHYS SOC, V9, P269

[9] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J].

NELSON, DF ;

GERSHENZON, M ;

ASHKIN, A .

APPLIED PHYSICS LETTERS, 1963, 2 (09) :182-184

[10] TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS [J].

PANKOVE, JI .

PHYSICAL REVIEW LETTERS, 1962, 9 (07) :283-&

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