THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN THERMAL SIO2

被引：84
作者：
HICKMOTT, TW [1 ]
机构：
[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 06期
关键词：
D O I：
10.1063/1.321935
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2583 / 2598
页数：16
相关论文
共 63 条
[1]   SURFACE-REACTIONS ON MOS STRUCTURES [J].
ALESSANDRINI, EI ;
CAMPBELL, DR ;
TU, KM .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4888-4893
[2]  
BRAUNLICH P, 1968, THERMOLUMINESCENCE G, P61
[3]   IONIC THERMOCURRENTS IN DIELECTRICS [J].
BUCCI, C ;
FIESCHI, R ;
GUIDI, G .
PHYSICAL REVIEW, 1966, 148 (02) :816-&
[4]   STUDIES OF SODIUM IN SIO2 FILMS BY NEUTRON ACTIVATION AND RADIOTRACER TECHNIQUES [J].
BUCK, TM ;
ALLEN, FG ;
DALTON, JV ;
STRUTHERS, JD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) :862-+
[5]   THERMAL DIFFUSION OF SODIUM IN SILICON NITRIDE SHIELDED SILICON OXIDE FILMS [J].
BURGESS, TE ;
BAUM, JC ;
FOWKES, FM ;
HOLMSTROM, R ;
SHIRN, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :1005-+
[6]   TRACER EVALUATION OF HYDROGEN IN STEAM-GROWN SIO2 FILMS [J].
BURKHARD.PJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :196-&
[7]   DIELECTRIC RELAXATION IN THERMALLY GROWN SIO2 FILMS [J].
BURKHARDT, PJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :268-+
[8]  
Carter, 1962, VACUUM, V12, P245, DOI DOI 10.1016/0042-207X(62)90526-2
[9]   EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].
CHOU, NJ ;
ELDRIDGE, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+
[10]   APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES [J].
CHOU, NJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :601-&
1234567