PREPARATION OF BATIO3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING ULTRASONIC SPRAYING

被引：52

作者：

KIM, IT ^{[1
]}

LEE, CH ^{[1
]}

PARK, SJ ^{[1
]}

机构：

[1] KEIMYUNG UNIV,DEPT MAT ENGN,TAEGU 705701,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 9B期

关键词：

BATIO3; THIN FILM; MOCVD; ULTRASONIC SPRAYING; COMMON SOLUTION;

D O I：

10.1143/JJAP.33.5125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric BaTiO3 thin films were fabricated by metalorganic chemical vapor deposition (MOCVD) at atmospheric pressure. The ultrasonic spraying technique has been used to carry the source materials. The common solutions of barium-diethylhexanoate and diisopropoxy-titanium-bis-acetylacetonate in n-butanol were used as the starting materials. Since the concentration of sources can be controlled in the common solution, this method is more simple and precise than other CVD processes. The films had(110)preferred orientation with increasing temperature. The dielectric constant (epsilon) and the loss factor (tan delta) of thin film deposited at 550 degrees C were about 250 and 0.1, respectively. The leakage current density was 10(-5) A/cm(2) at 0.1 MV/cm.

引用

页码：5125 / 5128

页数：4