INVESTIGATION OF THE PHYSICAL MODELING OF THE GATE-DEPLETION EFFECT

被引：23

作者：

HABAS, P ^{[1
]}

FARICELLI, JV ^{[1
]}

机构：

[1] DIGITAL EQUIPMENT CORP,HUDSON,MA 01749

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/16.137331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The physical modeling of the gate for the analysis of the gate-depletion effect is investigated. The accuracy of the assumed rigid-parabolic-band model is examined by comparing the numerical simulation with the experimental C-V data. Disagreement between calculation and measurement is observed and several physical phenomena which may be responsible for it are proposed. An engineering approach to remove the disagreement is given. The presented investigations may be of general interest for modeling of heavily doped space-charge regions.

引用

页码：1496 / 1500

页数：5