RELEASING MATERIAL FOR THE GROWTH OF SHAPED SILICON-CRYSTALS

被引：18

作者：

MAEDA, Y

YOKOYAMA, T

HIDE, I

MATSUYAMA, T

SAWAYA, K

机构：

[1] Hoxan Corp, Hoxan Research Lab,, Sapporo, Jpn, Hoxan Corp, Hoxan Research Lab, Sapporo, Jpn

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 02期

关键词：

D O I：

10.1149/1.2108594

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：440 / 443

页数：4

共 10 条

[1]

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[8] BEHAVIOR OF LIGHT IMPURITY ELEMENTS IN PRODUCTION OF SEMICONDUCTOR SILICON [J].

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[10]

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