REFRACTIVE-INDEX CHANGES IN A GAAS MULTIPLE QUANTUM-WELL STRUCTURE PRODUCED BY IMPURITY-INDUCED DISORDERING USING BORON AND FLUORINE

被引：15

作者：

HANSEN, SI

MARSH, JH

ROBERTS, JS

GWILLIAM, R

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

[2] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 13期

关键词：

D O I：

10.1063/1.104320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of boron and fluorine impurity-induced disordering on the refractive index of Al(x)Ga(1-x)As multiple quantum well waveguides has been studied experimentally using a grating coupler formed in low-index material. Substantial changes > 1% in the refractive index, were obtained in partially disordered material over the measured wavelength range. Fluorine was found to produce larger changes than boron for similar annealing conditions.

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页码：1398 / 1400

页数：3

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