FE2O3 - INORGANIC ELECTRON RESIST MATERIAL

被引：11

作者：

KAMMLOTT, GW ^{[1
]}

SINCLAIR, WR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 07期

关键词：

D O I：

10.1149/1.2401955

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：929 / 932

页数：4

共 10 条

[1] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].

EVERHART, TE ;

HOFF, PH .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&

[2]

FITZGIBBONS ET, 1970, AFSOR691972 NASA JSE

[3]

GALLAGHER PK, 1974, THERMOCHIM ACTA, V8, P141

[4]

HILL BH, 1969, J ELECTROCHEM SOC, V115, P668

[5] CHEMICAL VAPOR DEPOSITION OF IRON OXIDE FILMS FOR USE AS SEMITRANSPARENT MASKS [J].

MACCHESNEY, JB ;

OCONNOR, PB ;

SULLIVAN, MV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :776-+

[6] FABRICATION OF PLANAR SILICON TRANSISTORS WITHOUT PHOTORESIST [J].

OKEEFFE, TW ;

HANDY, RM .

SOLID-STATE ELECTRONICS, 1968, 11 (02) :261-&

[7] SPUTTERED FE2O3 FILMS FOR USE IN SEE THROUGH MASKS [J].

PETERS, FG ;

SINCLAIR, WR ;

SULLIVAN, MV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) :305-&

[8] IRON-OXIDE - INORGANIC PHOTORESIST AND MASK MATERIAL [J].

SINCLAIR, WR ;

ROUSSEAU, DL ;

STANCAVI.JJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) :925-928

[9] MATERIALS FOR USE IN A DURABLE SELECTIVELY SEMITRANSPARENT PHOTOMASK [J].

SINCLAIR, WR ;

SULLIVAN, MV ;

FASTNACHT, RA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :341-+

[10] IRON OXIDE SEE-THROUGH PHOTOMASKS [J].

SULLIVAN, MV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) :545-550

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