EPITAXIAL GROWTH OF SIC FILM ON SILICON SUBSTRATE AND ITS CRYSTAL STRUCTURE

被引：45

作者：

NAKASHIMA, H

SUGANO, T

YANAI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1966年 / 5卷 / 10期

关键词：

D O I：

10.1143/JJAP.5.874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：874 / +

页数：1

共 12 条

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