PHOTOELECTROCHEMICAL CHARACTERIZATION OF CDSNP2 CRYSTALS

被引:14
作者
FOLMER, JCW
TUTTLE, JR
TURNER, JA
PARKINSON, BA
机构
关键词
D O I
10.1149/1.2114175
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1608 / 1611
页数:4
相关论文
共 25 条
[1]   EFFICIENT P-INP(RH-H ALLOY) AND P-INP(RE-H ALLOY) HYDROGEN EVOLVING PHOTO-CATHODES [J].
AHARONSHALOM, E ;
HELLER, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) :2865-2866
[2]   CDP2-SN SYSTEM AND SOME PROPERTIES OF CDSNP2 CRYSTALS [J].
BUEHLER, E ;
WERNICK, JH ;
SHAY, JL .
MATERIALS RESEARCH BULLETIN, 1971, 6 (05) :303-&
[3]   CONCERNING GROWTH OF SINGLE CRYSTALS OF II-IV-V DIAMOND-LIKE COMPOUNDS ZNSIP2, CDSIP2, ZNGEP2, AND CDSNP2 AND STANDARD ENTHALPIES OF FORMATION FOR ZNSIP2 AND CDSIP2 [J].
BUEHLER, E ;
WERNICK, JH .
JOURNAL OF CRYSTAL GROWTH, 1971, 8 (04) :324-&
[4]  
CAHEN D, UNPUB PROG CRYSTAL G
[5]   MOTT-SCHOTTKY PLOTS AND FLAT-BAND POTENTIALS FOR SINGLE-CRYSTAL RUTILE ELECTRODES [J].
COOPER, G ;
TURNER, JA ;
NOZIK, AJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :1973-1977
[6]  
FOLMER JCW, 1983, J ELECTROCHEM SOC, V130, pC442
[7]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[8]   N-TYPE GAAS PHOTO-ANODES IN ACETONITRILE - DESIGN OF A 10.0-PERCENT EFFICIENT PHOTO-ELECTRODE [J].
GRONET, CM ;
LEWIS, NS .
APPLIED PHYSICS LETTERS, 1983, 43 (01) :115-117
[9]   MOSSBAUER STUDY OF TIN PHOSPHIDES [J].
HAGGSTROM, L ;
GULLMAN, J ;
ERICSSON, T ;
WAPPLING, R .
JOURNAL OF SOLID STATE CHEMISTRY, 1975, 13 (03) :204-207
[10]   11.5-PERCENT SOLAR CONVERSION EFFICIENCY IN THE PHOTOCATHODICALLY PROTECTED P-INP-V3+-V2+-HCL-C SEMICONDUCTOR LIQUID JUNCTION CELL [J].
HELLER, A ;
MILLER, B ;
THIEL, FA .
APPLIED PHYSICS LETTERS, 1981, 38 (04) :282-284