ENERGY-LEVELS OF PALLADIUM IN SILICON

被引：17

作者：

SO, L ^{[1
]}

GHANDHI, SK ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 02期

关键词：

D O I：

10.1016/0038-1101(77)90059-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：113 / 117

页数：5

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[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5229 - 5235
[3] MILLER MD, 1975, INT DEV M
[4] PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE
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