CHANNELING-EFFECT STUDY OF DEUTERON-INDUCED DAMAGE IN SI AND GE CRYSTALS

被引：15

作者：

BAERI, P

CAMPISANO, SU

FOTI, G

RIMINI, E

机构：

[1] UNIV CATANIA,IST FIS,CATANIA,ITALY

[2] ATOM ENERGY CANADA LTD,CHALK RIVER NUCL LABS,CHALK RIVER,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 08期

关键词：

D O I：

10.1063/1.88223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：424 / 426

页数：3

共 11 条

[1] CONVERSION FROM AN ENERGY SCALE TO A DEPTH SCALE IN CHANNELING EXPERIMENTS [J].

BOTTIGER, J ;

EISEN, FH .

THIN SOLID FILMS, 1973, 19 (02) :239-246

[2]

BROWN WL, 1973, RADIATION DAMAGE DEF, P416

[3] BEAM-INDUCED LATTICE DISORDER IN CHANNELING EXPERIMENTS ON SI AND GE [J].

CAMPISANO, SU ;

GRASSO, F ;

RIMINI, E ;

FOTI, G .

APPLIED PHYSICS LETTERS, 1972, 21 (09) :425-+

[4] CHANNELING OF MEV PROJECTILES IN TUNGSTEN AND SILICON [J].

DAVIES, JA ;

DENHARTOG, J ;

WHITTON, JL .

PHYSICAL REVIEW, 1968, 165 (02) :345-+

[5] TEMPERATURE AND ENERGY DEPENDENCE OF PROTON DECHANNELING IN SILICON [J].

FOTI, G ;

GRASSO, F ;

QUATTROCCHI, R ;

RIMINI, E .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (07) :2169-+

[6]

HIRVONEN JK, 1971, ION IMPLANTATION SEM, P8

[7]

Lindhard J., 1965, KGL DANSKE VIDENSKAB, V34

[8]

MAYER JW, 1970, ION IMPLANTATION SEM, pCH3

[9]

PABST HJ, 1973, RAD DAMAGE DEFECTS S, P438

[10]

PICRAUX ST, 1972, APPL PHYS LETT, V20, P91, DOI 10.1063/1.1654061

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