SUBNANOSECOND JOSEPHSON TUNNELING MEMORY CELL WITH NONDESTRUCTIVE READOUT

被引：50
作者：
ZAPPE, HH [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1975年 / SC10卷 / 01期
关键词：
D O I：
10.1109/JSSC.1975.1050548
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：12 / 19
页数：8
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