PREPARATION OF N-ZNO/P-SI HETEROJUNCTION BY SOL-GEL PROCESS

被引：46

作者：

OKAMURA, T ^{[1
]}

SEKI, Y ^{[1
]}

NAGAKARI, S ^{[1
]}

OKUSHI, H ^{[1
]}

机构：

[1] KYOCERA CORP,CENT RES LAB,KAGOSHIMA 89943,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 6B期

关键词：

ZNO; THIN FILM; SOL-GEL; DIODE; SEMICONDUCTOR; HETEROJUNCTION;

D O I：

10.1143/JJAP.31.L762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N-type ZnO thin films with a crack and columnar-free structure were successfully prepared on p-type Si substrates by the sol-gel process. The current-voltage (I-V) characteristics of the heterojunction of n-ZnO/p-Si show a rectification with strong electrical breakdown strength of higher than 10(7) V/cm. The capacitance-voltage (C-V) characteristics show an approximate linear C-2-V relationship in the reverse bias condition. These results indicate that the ZnO films prepared by the sol-gel process are good enough to be used as a semiconducting material in electrical devices.

引用

页码：L762 / L764

页数：3

共 12 条

[1]

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[2]

HIRANO S, 1988, CERAM T, V1, P171

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