ABOVE BANDGAP LUMINESCENCE OF P-TYPE GAAS EPITAXIAL LAYERS

被引：6

作者：

SAPRIEL, J ^{[1
]}

CHAVIGNON, J ^{[1
]}

ALEXANDRE, F ^{[1
]}

AZOULAY, R ^{[1
]}

SERMAGE, B ^{[1
]}

RAO, K ^{[1
]}

VOOS, M ^{[1
]}

机构：

[1] ECOLE NORM SUPER,PHYS MAT CONDENSEE LAB,F-75231 PARIS 05,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 79卷 / 06期

关键词：

D O I：

10.1016/0038-1098(91)90048-Z

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

New photoluminescence bands are observed in p-type GaAs epitaxial layers at 300 and 80 K, above the bandgap. These bands are independent of the nature of the dopant (Zn, Be, C) and of the growth technique (MBE or MOCVD). Their intensities increase as a function of the p doping (1 x 10(17) < p < 2 x 10(20) cm-3) and peak at energies which correspond to transitions between the GAMMA-6, L6 and X6 minima of the conduction band and the GAMMA-8 and GAMMA-7 maxima of the valence band.

引用

页码：543 / 546

页数：4

共 9 条

[1] AUGER RECOMBINATION IN GAAS AN GASB [J].

BENZ, G ;

CONRADT, R .

PHYSICAL REVIEW B, 1977, 16 (02) :843-855

[2] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[3] ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS [J].

CHIANG, TC ;

KNAPP, JA ;

AONO, M ;

EASTMAN, DE .

PHYSICAL REVIEW B, 1980, 21 (08) :3513-3522

[4] BAND-STRUCTURE DETERMINATION OF GAAS FROM HOT-ELECTRON LUMINESCENCE [J].

FASOL, G ;

HUGHES, HP .

PHYSICAL REVIEW B, 1986, 33 (04) :2953-2956

[5]

MADELUNG O, 1986, LANDOLTBORNSTEIN, V22, P14446

[6] HOT-ELECTRON PHOTO-LUMINESCENCE IN GAAS CRYSTALS [J].

MIRLIN, DN ;

KARLIK, IJ ;

NIKITIN, LP ;

RESHINA, II ;

SAPEGA, VF .

SOLID STATE COMMUNICATIONS, 1981, 37 (09) :757-760

[7] EVIDENCE FOR AUGER AND FREE-CARRIER LOSSES IN GAINASP-INP LASERS - SPECTROSCOPY OF A SHORT WAVELENGTH EMISSION [J].

MOZER, A ;

ROMANEK, KM ;

SCHMID, W ;

PILKUHN, MH ;

SCHLOSSER, E .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :964-966

[8] OVAL DEFECTS IN GA1-XALXAS MOLECULAR-BEAM EPITAXY LAYERS - A RAMAN-SCATTERING AND PHOTOLUMINESCENCE COMBINED STUDY [J].

SAPRIEL, J ;

CHAVIGNON, J ;

ALEXANDRE, F .

APPLIED PHYSICS LETTERS, 1988, 52 (23) :1970-1972

[9] CONDUCTION-BAND DISPERSION, CRITICAL-POINTS, AND UNOCCUPIED SURFACE-STATES ON GAAS(110) - A HIGH-RESOLUTION ANGLE-RESOLVED INVERSE PHOTOEMISSION-STUDY [J].

STRAUB, D ;

SKIBOWSKI, M ;

HIMPSEL, FJ .

PHYSICAL REVIEW B, 1985, 32 (08) :5237-5244

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