HIGH-SPEED INTEGRATED INJECTION LOGIC (I2L)

被引：28

作者：

MULDER, C ^{[1
]}

WULMS, HEJ ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 03期

关键词：

D O I：

10.1109/JSSC.1976.1050740

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：379 / 385

页数：7

共 10 条

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[2] TERMINAL-ORIENTED MODEL FOR MERGED TRANSISTOR LOGIC (MTL) [J].

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[3] INJECTION MODEL - STRUCTURE-ORIENTED MODEL FOR MERGED TRANSISTOR LOGIC (MTL) [J].

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[4] NONSATURATED INTEGRATED INJECTION LOGIC [J].

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ELECTRONICS LETTERS, 1975, 11 (03) :63-64

[5] A CHARGE CONTROL RELATION FOR BIPOLAR TRANSISTORS [J].

GUMMEL, HK .

BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (01) :115-+

[6] AN INTEGRAL CHARGE CONTROL MODEL OF BIPOLAR TRANSISTORS [J].

GUMMEL, HK ;

POON, HC .

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[7] INTEGRATED INJECTION LOGIC - NEW APPROACH TO LSI [J].

HART, K ;

SLOB, A .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) :346-&

[8]

Hill C. F., 1968, MICROELECTRONICS, V1, P16

[9] DEVICE PHYSICS OF INTEGRATED INJECTION LOGIC [J].

KLAASSEN, FM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (03) :145-152

[10]

KOOI E, 1973, SEMICONDUCTOR SILICO, P860

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